![]() The choice of molecules for ALD blocking SAMs is sparse furthermore, deficiency in the proper understanding of the SAM chemistry and its changes upon metal layer deposition further adds to the challenges. However, key limitations have limited the potential of AS-ALD as a patterning method. Self-assembled monolayers (SAMs) have been explored as an avenue for realizing AS-ALD, wherein surface-active sites are modified in a specific pattern via SAMs that are inert to metal deposition, enabling ALD nucleation on the substrate selectively. Area-selective atomic layer deposition (AS-ALD) is a self-aligned manufacturing technique with high precision and control, which offers cost effectiveness compared to the traditional patterning techniques. Modern-day chip manufacturing requires precision in placing chip materials on complex and patterned structures. ![]()
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